| 摘要 |
PURPOSE:To improve the manufacturing yield of a semiconductor device by coupling an electro-optical system for forming a variable rectangular beam capable of patterning at a high speed through a vacuum chamber with an electro-optical system for forming a Gaussian beam and enabling to move a sample in the chamber, thereby accurately forming an ultrafine pattern at a high speed. CONSTITUTION:A shutter 11 between a preliminary exhaust chamber 4 and an electro-optical system 1 is opened, and a wafer 15 is conveyed by a loader 9 on a stage 6. After the shutter 11 is closed, a large area pattern capable of being drawn by the variable rectangular beam is drawn at a high speed. Then, a shutter 12 is opened, and the wafer 15 on the stage 6 is conveyed on a loader 8 in a vacuum chamber 3. After the shutter 12 is closed, a shutter 13 is opened, and the wafer 15 is conveyed on a stage 7. After the shutter 13 is closed, an accurate ultrafine pattern which cannot be drawn by the system 1 is drawn by Gaussian beam formed by an electro-optical system 2. After patterning, a shutter 14 is opened, and the wafer 15 is conveyed to a loader 10. After the shutter 14 is closed, the wafer 15 is removed. |
