| 摘要 |
PURPOSE:To enhance the uniformity of implantation of ions into a wafer, by causing an ion beam to perform a scanning motion in vertical directions parallel with each other, and by fitting the wafer to a platen, setting up the platen to cause the wafer to face the ion beam, and translating the platen in a horizontal direction. CONSTITUTION:A beam scanning system electrically causes an ion beam 2 to perform a scanning motion in mutually-parallel vertical directions so as to enter into a vacuum chamber 40. After a carrier 38R holding a plurality of wafers 8 is mounted in an airtight chamber 32R and evacuation of gas is performed, the wafers are transferred to a stocker 42R and carried to a horizontal platen 58R by conveyor belts 47R-49R so that the wafer is fitted to the platen. The platen 58R is then set up by an angle of 90 deg. so that the platen extends vertically in an ion beam irradiation area. The platen 58R is then translated horizontally in the area to inject ions into the wafer 8. according to this constitution, the implantation of the ions into the wafer is made uniform and the equipment is made compact.
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