| 摘要 |
PURPOSE:To form an accurate resist pattern by forming a resist layer which gradually decreases in containing light absorber density in a surface direction from the coating surface, exposing and developing the layer. CONSTITUTION:A resist layer 3 is coated on the upper surface of the aluminum layer 2 on a silicon wafer 1. A light absorber 4 s contained in the layer 3, and higher the density is, the nearer the layer 2 is disposed to the surface of the layer 2, and lower the density is, the layer 2 is nearer to the surface of the layer 3. When the layer 3 is exposed, the reflected light on the surface of the exposed light arrived at the surface of the layer 2 is absorbed and removed by a light absorber 4 of high density. Thus, an accurate resist pattern can be formed. |
