| 摘要 |
PURPOSE:To dissipate heat generated in the inside excellently, and to obtain a small-sized semiconductor element, cost thereof is low, by forming a substrate parent-body consisting of an Si semiconductor layer or a substrate parent-body, in which a metallic layer is shaped onto the Si semiconductor layer, and a diamond film formed onto the substrate parent-body. CONSTITUTION:Diamond has thermal conductivity higher than other non-metallic substances and metallic substances, and diamond can be grown directly on the whole surface of a substrate parent-body when diamond is deposited on the substrate parent-body through a vapor phase synthetic method. Consequently, when an element is constituted onto an Si semiconductor substrate on the side reverse to a diamond film, heat generated in the element is propagated to the diamond film through the substrate parent-body, and dissipated to a package extremely rapidly. The diamond film is deposited on the non-grinding surface of a semiconductor such as an Si wafer, one surface thereof is ground, through a plasma CVD method. A theoretical IC is formed onto the grinding surface of the Si wafer and cut down, Au is evaporated onto the diamond film, and the whole is attached to the substrate with radiator fins composed of a Cu-W alloy through silver soldering. |
