| 摘要 |
PURPOSE:To simultaneously set photocharge integration starting times at all picture elements and to arbitrarily alter an integrating time by constructing a solid state image sensor with unit picture elements of the prescribed construction. CONSTITUTION:An epitaxial layer 2 separated by an insulator separating layer 8 is formed on an N<+> type substrate 1 for forming the drain of a static induction transistor SIT. Digged part 4, 4' having an N<+> type diffused layer 3 to become a source and a P<+> type diffused layer 5 to become a gate diffused layer are formed on the surface of the layer 2, and electrodes 10, 7, 7' are formed. A P<+> type diffused layer 9 is formed, a P-N junction is formed with the layer 2, thereby forming a photoelectric converter. Further, a transistor MOS transistor is formed of the layers 9, 5 and electrode 7'. The unit element is coated with a light shielding film 11 except a photoreceptor. A terminal 10 is connected with horizontal selection signal line 15 and the terminals 7, 7' are connected with a vertical selective line 14. |
