| 摘要 |
PURPOSE:To enable peeling-off to be performed completely in a short time, by soaking the rest of resist with ehtyl-cellosolve-acetate or the like dripped as peeling-off liquid on each semiconductor wafer and then rotating the wafer to drip the peeling-off liquid again. CONSTITUTION:A carried semiconductor wafer 2 is transferred to a freely- rotating wafer chuck 4. A peeling-off liquid nozzle 7, rinsing water nozzle 8, and pure water nozzle 9 are equipped projecting from an upper side cup. With ethyl-cellosolve-acetate solution dripped on the semiconductor wafer 2 fixed at the wafer chuck 4, through the nozzle 7, a resist layer attaching to the wafer is soaked, and in some seconds rotating the wafer chuck to scatter the dissolving resist layer, and besides the rest of resist is dissolved/removed with the peeling- off liquid dripped through the nozzle 7 again. Successively, after the rinsing liquid is dripped through the nozzle 8 to rinse the semiconductor wafer, complete rinsing is performed with pure water dripped through the nozzle 9. |
