| 摘要 |
PURPOSE:To obtain a semiconductor device which has less damage of the upper electrode of a source with less thermal resistance by escaping gap when forming a small hole at the upper electrode of a viahole and forming the viahole through a pellet. CONSTITUTION:An FET active layer 2, a gate electrode 3, an insulating protective film 4, a drain ohmic electrode 5, a drain upper electrode 6, a source ohmic electrode 7 and a source upper electrode 8 are formed on a semi-insulating GaAs substrate 1 to form a window 9a of a source upper electrode to become a viahole. After an upper electrode protective film 10 is coated on the portion except the window 9a, a viahole 11 is formed by etching, and a back surface electrode 12 is formed. Then, after a back surface electrode protective film 13 is formed, a hole 9 is formed at the electrode 12 directly under the window 9a, and the films 10, 13 are removed. |
