| 摘要 |
PURPOSE:To eliminate the need for an electrode for connection, to reduce the occupying area of a grounded capacitor and to miniaturize a chip by forming a hole to a substrate at a position just under the MIM type capacitor and directly connecting a lower electrode and a metallic thin-film on the back of the substrate through the hole. CONSTITUTION:A capacitor 8 is constituted by a lower electrode 20 formed onto a semi-insulating substrate 1, a dielectric film 21 shaped onto the lower electrode and an upper electrode 22 formed onto the film 21. A hole 23 having a tapered section is shaped to the semi-insulating substrate 1 just under the lower electrode 20 through etching, etc. from the back to expose the lower electrode 20 to the back side, and a metallic thin-film 24 is formed onto the side surface of the hole 23 and the back of the substrate 1 through a sputtering method, etc. and connected directly to the lower electrode 20. The capacitor is connected to the metallic thin-film 24 on the back of the semi-insulating substrate 1 through the hole 23 shaped just under the lower electrode 20 and grounded, thus eliminating the need for an electrode for grounding. Accordingly, an area Sa1 is used approximately as an occupying area as it is. |
