发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To reduce the power consumption of a power source which operates in a memory circuit when the power source acting on a drive circuit is released by providing a high resistance circuit at the output unit of the drive circuit, and securing the potential of the output unit to a ground level. CONSTITUTION:When a power source 11 is inserted to set the input terminal 16 of an inverter having CMOSFETs 14, 15 operating with the power source 11 to a ground level, the P-channel MOSFET 14 is conducted, and the potential of a signal line 8 is decided by a resistance dividing ratio of the CMOSFET 14 and a high resistance 13. When the terminal 16 is set to the ground level at normal operation time, an output terminal 19 is set to the ground level. The potential of the line 18 becomes the ground level by the high resistance 13 in the state that the power source 11 is released to obtain a stable potential and to be hardly affected by an external noise.
申请公布号 JPS61263250(A) 申请公布日期 1986.11.21
申请号 JP19850105161 申请日期 1985.05.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 MEN KIYOSHI
分类号 H01L21/822;H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L21/822
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