| 摘要 |
<p>A bipolar transistor suitable for high speed operation and having base (11), collector (9) and emitter (12) semiconductor regions is provided. The base region (11) is provided with two contacts (13, 14) on either side of the base region one of which (14) is connected to and preferably integral with the emitter contact (15). The resulting current flow (17) beneath the emitter debiasses all but a portion of the emitter adjacent the base contact thus giving shorter transit times, increased speed of operation and enabling use of reduced device area with reduced collector-substrate and collector-base capacitance.</p> |
