发明名称 Booster circuit.
摘要 <p>A booster circuit includes a precharge capacitor (C&lt;Sub&gt;2&lt;/Sub&gt;), a precharge driver circuit (20) having a first bootstrap circuit (C&lt;Sub&gt;59&lt;/Sub&gt;, Q&lt;Sub&gt;58&lt;/Sub&gt;, Q&lt;Sub&gt;61&lt;/Sub&gt;) and precharging a voltage to the precharge capacitor in a reset mode, and an output driver circuit (19) having a switching circuit (Q&lt;Sub&gt;21&lt;/Sub&gt;) for cutting off the output of the precharged voltage of the precharged capacitor in the reset mode and a second bootstrap circuit driving the switching circuit in an operation mode. The booster circuit further includes an additional switching circuit (Q&lt;Sub&gt;1&lt;/Sub&gt;) for outputting a voltage to be superimposed onto the precharge voltage in the operation mode.</p><p>The booster circuit may be applicable to a dynamic semiconductor memory device, for boosting a voltage of a word line at a high speed and for improving integration.</p>
申请公布号 EP0202025(A2) 申请公布日期 1986.11.20
申请号 EP19860302714 申请日期 1986.04.11
申请人 FUJITSU LIMITED 发明人 NAKANO, MASAO;TAKEMAE, YOSHIHIRO;SATO, KIMIAKI;KODAMA, NOBUMI
分类号 H03K19/096;G11C5/14;G11C8/08;H03K17/06;(IPC1-7):G11C11/40 主分类号 H03K19/096
代理机构 代理人
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