| 摘要 |
<p>PURPOSE:To shorten a film forming time and to reduce the generation of a pinhole by enhancing density, by constituting an interlayer insulating film of a single film comprising silicon nitride or silicon oxide or a composite film comprising both silicon compounds and applying the same by a plasma reaction coating process. CONSTITUTION:For example, an insulating substrate 4 is formed of Al2O3 ceramic and a glaze layer 3 for controlling heat dissipation is applied to said substrate 4. The lower layered electrode 6 of a common electrode comprises a metal layer, for example, comprising Mo, Ta or W and an intercalation insulating film 7 is provided thereon and, for example, a heat generator layer 2 comprises Ta2N or Cr-Si-O with a thickness of 500-1500Angstrom . The common electrode 8 and an indivisual electrode 9 are arranged in opposed relationship so as to provide a gap of 1.2-0.3mm therebetween to form a heat generating part 1. The intercalation insulating film 7 is formed to a single film comprising silicon nitride or silicon oxide or a composite film comprising both silicon compounds by a plasma reaction coating (P-CVD) process. Because said insulating layer is formed of the composite film, the heat generating part is not deteriorated even if raised to high temp. of 500-700 deg.C.</p> |
