发明名称 Bonding method of semiconductor device.
摘要 A bonding method of semiconductor device by using a film carrier; A heat-resistive insulating layer is deposited all over the surface of a dummy wafer on which a photo-resist film having a predetermined pattern is previously formed; The photo-resist film is removed together with the heat-resistive insulating layer for forming openings; Bumps are formed on the openings by plating using the heat-resistive insulating layer as a mask; After transferring the bumps to inner leads, the bumps of the inner leads are bonded to bonding pads of the semiconductor element.
申请公布号 EP0201916(A2) 申请公布日期 1986.11.20
申请号 EP19860106546 申请日期 1986.05.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD 发明人 MAEDA, YUKIO;KITAYAMA, YOSHIFUMI;MURAKAMI, SHUICHI
分类号 H01L21/60;H01L21/603;H01L23/485 主分类号 H01L21/60
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