VERFAHREN ZUM AUFWACHSEN EINER GAAS-EINKRISTALLSCHICHT

摘要

Triethylgallium (TEG) and arsine (AsH3) are used as gaseous compounds for growing a GaAs monocrystal semiconductor film. One gas is introduced into the vacuum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and the discharged after the passage of a predetermined time whereby a crystal for one molecular layer grows. By use of TEG as a gallium source, reaction progresses even when a temperature of the base is below 300 DEG C, and a GaAs monocrystal film which is extremely less in lattice failure and impurities was obtained.