| 摘要 |
<p>A magneto-electric converter element in which a thin semiconductor film (14) of a compound of the III-V group containing arsenic and having a thickness of 0.1 νm to 10 νm is formed as a magnetism sensing portion on a substrate (12) which has an organic insulating layer (13) on the surface thereof, ohmic electrodes (16) are formed on required regions of the thin film, and multi-layer wire bonding electrodes each consisting of a hard metal layer (17) and a bonding layer (18), are formed on the ohmic electrodes.</p> |
