| 摘要 |
PURPOSE:To obtain a growth layer having steep impurity distribution by housing a liner pipe with a partition wall hanging down up to the central section of a reaction pipe of the inner circumference of the reaction pipe, inserting a susceptor with a stopper being in contact with the partition wall to the bottom of the liner pipe and moving a substrate to be treated in the reaction pipe partitioned by these partition wall, liner pipe and susceptor through a through-hole formed to the stopper. CONSTITUTION:A liner pipe 2 made of quartz is housed in a cylindrical reaction pipe 1 on which a high-frequency coil 17 is wound, and a susceptor 5 made of carbon on which a substrate to the treated 10 is placed is taken into and out of the base of the liner pipe 2 by using an inserting bar 6 made of quartz. In the constitution, a semicircular partition wall 3 is hung down from the lower surface of the liner pipe 2, a stopper 7 is projected and formed to the surface of the susceptor 5, a base thereof takes a semicircle, and the inside of the liner pipe 2 is partitioned into reaction chambers I and II by these partition wall, susceptor and stopper. A raw material gas introducing port and a discharge port are shaped previously in the reaction pipe 1, the substrate 10 treated in the reaction chamber I is passed through a through-hole 11 formed to the stopper 7 and moved into the reaction chamber II, and an upper layer is grown. |
