| 发明名称 |
SELECTIVE CHEMICAL VAPOR DEPOSITION METHOD AND APPARATUS |
| 摘要 |
A method and apparatus for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation. |
| 申请公布号 |
WO8606755(A1) |
申请公布日期 |
1986.11.20 |
| 申请号 |
WO1986US00994 |
申请日期 |
1986.05.09 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
WILSON, RONALD, HARVEY;STOLL, ROBERT, WINSTON;CALACONE, MICHAEL, ANTHONY |
| 分类号 |
C23C16/04;C23C16/48;H01L21/268;H01L21/285;H01L21/31;(IPC1-7):C23C16/04 |
主分类号 |
C23C16/04 |
| 代理机构 |
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