| 摘要 |
PURPOSE:To make the uniform etching of multi-layered films possible by providing respectively independently values and gas flow rate control mechanisms to plural gas supply openings provided to a wafer treating chamber for plasma etching. CONSTITUTION:The wafers 2 carried through the valve 11 into a preliminary vacuum chamber 8 are carried into the wafer treating chamber 1 having an evacuating mechanism 12 where the wafers are set on a table 3 in a plasma etching device consisting of the wafer treating chamber 1 provided with a vac uum evacuation chamber 12 and the preliminary vacuum chamber 8. Plasma is then generated by a counter electrode 4 while the table 3 is rotated. Gases are respectively independently selected and supplied from gas supply sources 13 by the valves 6 and gas control mechanisms 7 corresponding to the characteristics of the wafers 2 through the plural gas supply openings 5 provided to the above-mentioned electrode 4, by which etching is executed.
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