| 摘要 |
PURPOSE:To produce the titled substrate capable of controlling crystallographic orientation and further position, size and shape of the individual crystal grains, by forming polycrystals partially in an amorphous semiconductor film, and carrying out channeling ion implantation. CONSTITUTION:A polycrystal region geometrically arranged at an interval less than the growth distance by solid phase epitaxial growth limited by the polycrystal formation of an amorphous semiconductor film is formed, and channeling ion implantation is carried out in the region to form seed crystals for the solid phase epitaxial growth by the subsequent heat treatment. The heat treatment is then carried out to give the aimed semiconductor film consisting of an assemblage of single crystal grains surrounded by the collision plane of the solid phase epitaxial growth from various crystals. In the process, the region of polycrystal formation of the amorphous semiconductor film and channeling direction of the channeling ion implantation can be controlled to control crystallographic orientation and further position, size and shape of the individual crystal grains.
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