| 摘要 |
PURPOSE:To obtain a flat thin film of high purity not contg. the constituent substance of a substrate by depositing the constituent element of a target on the substrate by sputtering without applying bias to the substrate, applying negative potential, and depositing the constituent element of the target by sputtering. CONSTITUTION:A target 3 is placed in a vacuum chamber 1 so that it confronts a substrate 2 in the chamber 1, and the constituent element of the target 3 is deposited on the substrate 2 by sputtering the target 3 with ions without applying negative potential to the substrate 2. After the lapse of a fixed time, negative potential is applied to the substrate 2, and the constituent element of the target 3 is deposited on the substrate 2 under the potential to form a thin film.
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