| 摘要 |
PURPOSE:To eliminate returned light noise, spectrum noise and nonlinear distortion deterioration by using a semiconductor laser having a wide spectrum width and a single axis mode as a signal light source. CONSTITUTION:An n-channel GaAs current narrowered layer 9 is grown on a P-channel GaAs substrate 8, and a p-channel GaAlAs clad layer 10, a non-dope GaAs active layer 11, a p-channel GaAlAs guide layer 12 and a p-channel InGaAs P guide layer 13 are grown continuously on a wafer formed with a V-shaped channel slot by the liquid phase epitaxial growing method. A rugged diffractive grating is formed on the optical guide layer 13, after the n-channel GaAlAs clad layer 14, an n-channel GaAs cap layer 15 are grown sequentially on the grating, ohmic metallic electrodes 16, 17 are formed sequentially on the cap layer 15 and the substrate 8 to obtain the semiconductor layer 3. The laser formed in this way is possible for the stabble single mode oscillation, the coherence length is short and no noise is generated. |
