| 摘要 |
A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating voltage of 500 V to 5 kV and disposed at a first position along the direction of movement of the substrate within the vacuum chamber, a first evaporator disposed at a second position along the direction of movement of the substrate within the vacuum chamber, and a second ion source having an accelerating voltage of 10 kV to 100 kV and disposed at a third position along the direction of movement of the substrate within the vacuum chamber, and optionally further comprising a second evaporator disposed at a fourth position along the direction of movement of the substrate within the vacuum chamber, which may be provided with high-frequency exciting means disposed in a path of release of vapor from the second evaporator toward the substrate for ionizing the vapor, and means for forming an electric field for accelerating the ionized vapor toward the substrate.
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