发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To relax the lowering of an output due to propagation phase difference by forming a feeding point to the base section of a gate-electrode finger and shaping an output extracting point where nearer in the opposite direction to another end section different from an end section, to which the feeding point is formed, from a central point in the main body of a drain electrode. CONSTITUTION:A feeding point feeding electricity to a gate electrode through a gate- extracting wiring connecting section is formed at one end section, to which a gate- extracting wiring is connected, in the main body of the gate electrode, and an output extracting point extracting an output from a drain electrode is shaped in the direction of a position oppositely facing the other end section of the main body of the gate electrode from a central point in the main body of the drain electrode. Electric length up to the output extracting point 9 from the feeding point 6 to the gate electrode is equalized when line width and a space between a gate and a drain are ignored even in signals, which pass any point in any gate-electrode finger and are propagated and amplified. Accordingly, the phase of signals propagated to the output extracting point is made approximately uniform according to the electrode arrangement pattern, and the lowering of the output due to phase difference as a conventional defect is relaxed.
申请公布号 JPS61260680(A) 申请公布日期 1986.11.18
申请号 JP19850102957 申请日期 1985.05.15
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 WADA YOSHIKI
分类号 H01L21/338;H01L29/41;H01L29/80;H01L29/812 主分类号 H01L21/338
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