发明名称 Refining process of reactive gas for forming semiconductor layer
摘要 A refined reactive gas is obtained by repeating more than once a step of liquefying a reactive gas and gasifying the liquefied gas in a liquefying and gasifying receptacle. Prior to the liquefaction-gasification step, cleaning treatment of the liquefying and gasifying receptacle thereinto hydrogen and then evacuating the receptacle.
申请公布号 US4623369(A) 申请公布日期 1986.11.18
申请号 US19850750512 申请日期 1985.07.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI
分类号 H01L21/205;C23C16/02;C23C16/24;C23C16/44;C23C16/448;F25J3/06;H01L21/22;H01L31/0248;H01L31/04;(IPC1-7):F25J3/00 主分类号 H01L21/205
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