发明名称 |
Refining process of reactive gas for forming semiconductor layer |
摘要 |
A refined reactive gas is obtained by repeating more than once a step of liquefying a reactive gas and gasifying the liquefied gas in a liquefying and gasifying receptacle. Prior to the liquefaction-gasification step, cleaning treatment of the liquefying and gasifying receptacle thereinto hydrogen and then evacuating the receptacle.
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申请公布号 |
US4623369(A) |
申请公布日期 |
1986.11.18 |
申请号 |
US19850750512 |
申请日期 |
1985.07.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
H01L21/205;C23C16/02;C23C16/24;C23C16/44;C23C16/448;F25J3/06;H01L21/22;H01L31/0248;H01L31/04;(IPC1-7):F25J3/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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