| 摘要 |
PURPOSE:To enlarge film thickness of the whole of a flattening film by a method wherein an inorganic flattening film is formed on an insulating film, then after an organic flattening film is formed on the inorganic flattening film, the organic and the inorganic flattening films and the insulating film are etched back. CONSTITUTION:An inorganic fluid is applied thin on an interlayer insulating film 1 to form an inorganic flattening film 4, and then an organic fluid is applied thick on the inorganic flattening film 4 to form an organic flattening film 5. Then after the interlayer insulating film 1 and the flattening films 4, 5 are heat-treated, the flattening films 5, 4 and the interlayer insulating film 1 are etched back by reactive ion etching. |
