| 摘要 |
PURPOSE:To inhibit oscillation by a Fabry-Perot mode approximately completely by forming an end section on the side reverse to an active waveguide in an external waveguide in an inclined plane. CONSTITUTION:An InGaAsP active waveguide layer 2, an N-InP clad layer 3 and a P-InGaAsP cap layer 4 are shaped onto an N-InP substrate 1 in succession, an etching-resistant protective film is formed to a section corresponding to the active waveguide layer 2, and a surface in which other sections are etched up to the substrate 1 is formed. An InGaAsP external waveguide layer 5 is shaped, an N-InP clad layer 6 is formed onto the layer 5, and a diffraction grating 7 is shaped to the upper surface of the clad layer 6. Striped structure having an inverted mesa-shaped section is formed, and P-InP first buried layers 12 and N-InP second buried layers 13 are grown on both sides in an epitaxial manner in succession. An SiO2 or Si3N4 protective film 8 is shaped, the end section of the external waveguide layer 5 is cut off, and an inclined plane A is formed. An Au/Zn electrode 9 and an Au/Sn electrode 10 are shaped. |
