发明名称 |
Method of examining microcircuit patterns |
摘要 |
Examination of microstructures of LSI and VLSI devices is facilitated by employing a method in which the device is photographed through a darkfield illumination optical microscope and the resulting negative subjected to inverse processing to form a positive on a photographic film. The film is then developed to form photographic prints or transparencies which clearly illustrate the structure of the device. The entire structure of a device may be examined by alternately photographing the device and selectively etching layers of the device in order to expose underlying layers.
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申请公布号 |
US4623255(A) |
申请公布日期 |
1986.11.18 |
申请号 |
US19830541526 |
申请日期 |
1983.10.13 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR, NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
SUSZKO, STEFAN F. |
分类号 |
G01R31/308;(IPC1-7):G01B11/00 |
主分类号 |
G01R31/308 |
代理机构 |
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代理人 |
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地址 |
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