发明名称 Method of examining microcircuit patterns
摘要 Examination of microstructures of LSI and VLSI devices is facilitated by employing a method in which the device is photographed through a darkfield illumination optical microscope and the resulting negative subjected to inverse processing to form a positive on a photographic film. The film is then developed to form photographic prints or transparencies which clearly illustrate the structure of the device. The entire structure of a device may be examined by alternately photographing the device and selectively etching layers of the device in order to expose underlying layers.
申请公布号 US4623255(A) 申请公布日期 1986.11.18
申请号 US19830541526 申请日期 1983.10.13
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR, NATIONAL AERONAUTICS AND SPACE ADMINISTRATION 发明人 SUSZKO, STEFAN F.
分类号 G01R31/308;(IPC1-7):G01B11/00 主分类号 G01R31/308
代理机构 代理人
主权项
地址