| 摘要 |
A semiconductor light-emitting device according to the present invention is made by forming an undoped In1-X GaXAs1-YPY active layer on a n-InP clad layer, a p-In1-XGaX As1-YPY active layer on said undoped active layer, and a p-n junction position in the interface between said n-InP layer and said undoped In1-XGaXAs1-YPY active layer or in the neighborhood thereof. By this structure, the heretofore inevitable problem of remote junction can be solved and the half value width of the light-emitting spectrum can be reduced. Therefore, the semiconductor light-emitting device according to the present invention provides higher response frequency and larger light-emitting output than the conventional semiconductor light-emitting device.
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