发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To enable the adjustment of the capacity value after pelletizing or assembling by dividing the top metal of an MIM capacitor into a plurality on a capacitor region, thereby connecting arbitrary number of component parts. CONSTITUTION:The surface of a substrate 10 is coated with an insulating film 209, and a capacitor primary metal 1 is formed on the film 20. A capacitor insulating film 2 is formed on the metal 1, and capacitor top metals 3-1-3-5 divided into a plurality are formed thereon. They are gathered to one through upper metal leading electrodes 4-1-4-5. Any of the electrodes 4-1-4-5 is cut by a laser trimmer to readily regulate the capacitor capacity value after pelletizing or assembling.</p>
申请公布号 JPS61259560(A) 申请公布日期 1986.11.17
申请号 JP19850101908 申请日期 1985.05.14
申请人 NEC CORP 发明人 UEDA KAZUYOSHI
分类号 H01L27/04;H01L21/822;H01L27/01;H05K1/16;H05K1/18 主分类号 H01L27/04
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