| 摘要 |
<p>In a P type well is embedded a highly doped N region allowing current flow between the N region being at least partially surrounded by a zone of highly doped P material allowing current flow between the well and the zone. Pref. a number of regions are arranged along an undulated string surrounded by the zone. Pref. the device includes a thyristor comprising two transistors with the base-emitter of the NPN transistor being shunted by a turn-off device. Pref. also the collector of the PNP transistor is constituted by the well, the emitter of the NPN transistor is constituted by the region and the zone constitutes an input to the turn-off device.</p> |
