| 摘要 |
PURPOSE:To prevent the production of pin holes or the like and the generation of strain due to change of lattice parameters, by growing single crystal ZnSe for providing end-face protecting films on the resonance faces of a semiconductor laser consisting of InGaAlP and InGaAsP layers. CONSTITUTION:An N-type InGaAlP layer 3 as first clad layer, an undoped InGaAlP layer 4 as active layer, a P-type InGaAlP layer 5 as second layer and a P-type GaAs layer 5' as cap layer are provided on an N<+>-GaAs crystal substrate 2, sequentially in that order. An oxide film 6 is further provided thereon, and a metallic layer 7 to be an upper electrode and a metallic layer 1 to be a lower electrode are provided so as to entirely cover the top and bottom faces. The wafer is cleaved to produce stripe-shaped substrates. Single crystal ZnSe is grown on the side faces of each substrate so as to form end-face protecting films 8. According to this method, the interface between the semiconductor laser and the end-face protecting film is allowed to have improved crystallizability, and hence no water or oxygen is adsorbed or transmitted therethrough, and the cleaved surface is prevented from being damaged, corroded or oxidized.
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