| 摘要 |
PURPOSE:To relieve the stress in sealing resin for improving the characteristics and the yield, by providing each MOS transistor such that the width of its gate is directed to the center of a semiconductor pellet. CONSTITUTION:Each of MOS transistors provided on the periphery of a pellet cut into a rectangular shape to be used as input/output buffers 2 is arranged such that width W of its gate is directed to the center 3 of the pellet. Accordingly, steps formed by source electrodes 4, drain electrodes 4, gate electrodes 6 and the like within the MOS transistor are also directed to the center 3 of the pellet. When the pellet is sealed with resin, therefore, any stress produced by the shrinkage or expansion of the resin during the sealing operation and during a temperature cycle is directed to the center 3 of the pellet along the steps, whereby the effect of the stress to the MOS transistor is decreased. The characteristics of the device can be thus prevented from being deteriorated, and the yield can be improved.
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