| 摘要 |
PURPOSE:To improve an electromigration resistance by providing diffused layers on the surface of a substrate, insulation films with contact holes and wirings with three-layer structures consisting of Al or Al alloy layers/TiN layers/Ti layers in the contact holes. CONSTITUTION:A P-type well 2, an N-type well 3 and a field oxide film 4, a gate oxide film 6 and gate electrodes 8a and 8b are formed on the surfaces of a P-type silicon substrate 1, an element region 5 and ion-implanted layers 7a and 7b respectively. After N<+> type source and drain regions 9a and 10a, P<+> type source and drain regions 9b and 10b and a layer insulation film 11 are formed, contact holes 12a and 12b are drilled. Ti layers 13, TiN layers 14 and pure Al layers 15 are deposited and patterned to form the first layer wirings 161 and 162 with three-layer structures. Then, after a CVD-SiO2 layer 17 is formed, a contact hole 18 is formed and the second layer Al wiring is formed with the same method. With this constitution, an electromigration resistance can be improved. |
