| 摘要 |
PURPOSE:To enable the formation of a metallic wiring subject to no disconnection at all by a method wherein a basic layer for metallic wiring wherein a step difference part is buried is obliquely formed to be dryetched meeting the requirement that the surface etching speed is slower than the etching speed of said basic layer. CONSTITUTION:An SiO3N4 layer 2 is formed on the surface of a semiconductor device 1 with a step difference of 90 deg.. Next the semiconductor device is arranged obliquely on an electrode 5 forming gradient angle theta1 of 60 deg.C. Meeting the etching requirements of power 100W, CF4 gas 25 SCCM, vacuum of 8X10<-2>Torr, the semiconductor device (InP substrate) 1 can not be etched but to anisotropically etch the Si3N4 layer 2 only. Resultantly, the Si3N4 layer 2 is provided with gentle slope of theta2=30 deg. at the step difference part 6. Through these procedures, a metallic wiring 4 can be formed by means of forming another Si3N4 layer 3 as an insulating film to form the metallic wiring 4. |
