SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE OF THE SAME

摘要

PURPOSE:To avoid a soft error caused by an alpha-ray by forming an alpha-ray countermeasure semiconductor region by utilizing a mask used for forming a contact hole for direct contact in an insulation film. CONSTITUTION:A mask 16 for etching and introducing an impurity is formed on the predetermined parts of a field insulation film 2 and an insulation film 4. After the exposed part of the insulation film 4 is removed to form a contact hole 5 for direct contact, the mask 16 is removed. Then a conductive layer 7A and a conductive layer 7B are formed and a semiconductor region 8 is formed. An N-type semiconductor region 9 is formed in the main surface part of a semiconductor substrate 1 by utilizing the conductive layers 7A and 7B and the field insulation film 2 as masks for introducing an impurity. A mask 10 for introducing an impurity is formed to form an N<+> type semiconductor region 11 and a P<+> type semiconductor region (an alpha-ray countermeasure semiconductor region) 12. With this constitution, a soft error of a semiconductor integrated circuit device which has a memory function can be avoided.