| 摘要 |
PURPOSE:To make it possible to inspect cracks and the like in one inspection operation, by additionally providing an inspecting wiring at the outside of high voltage circuits, which surround a logic circuit, and inspecting the conduction between the high voltage circuits and the ground potential, when a high withstanding voltage IC, in which the high voltage circuits and the logic circuit for control are provided on the same substrate, is inspected. CONSTITUTION:A logic circuit 13 and a pad group 14, which is used for the circuit 13 are provided on the same substrate. High voltage MOS transistor groups 12, which are controlled by the circuit 13, are provided at the parts, where the pad group 14 is not provided, on the same substrate. Thus, a high voltage IC is provided. In order to inspect the grounding faults, yield of cracking and the like in the high voltage IC, an Al wiring 30 for inspection is newly added to the outside of the transistor groups 12. A specified voltage is applied between an Al pad region 31, which is connected to the wiring 30, and Al pad regions 31-34, which are connected to the transistor groups 12, and the inspection is carried out. Thus the inspection is ensured and the shielding effect is provided by the wiring 30. Therefore, the IC characteristics become excellent. |
