| 摘要 |
PURPOSE:To highly integrate a semiconductor device in a high density by forming a lontigudinal memory area made of two cells with a common control gate. CONSTITUTION:A control gate (CG)1 buried continuously in one direction, float ing gates (FG) 2 at both sides of the gate 1, an n<+> type source region 4 formed commonly on a bottom, n<+> type drain regions 5 formed on a surface layer and individually separated at sides, a p-type channel region 6 formed thereunder, aluminum wirings 7 connected by a window with the drain regions and formed perpendicularly to the CG, and a trench isolation region 8 for forming cells in a zigzag shape are provided. The CG line 1 is disposed at the center common ly, the two FG 2 and the two regions 6, i.e., the two cells commonly provided with the CG are formed longitudinally back-to-back, and provided in a matrix shape as one memory area. Thus, the cell area can be reduced planely, and highly integrated. |
