| 摘要 |
PURPOSE:To obtain a semiconductor device having a low threshold voltage and a high performance interlayer insulating film or a passivation film, by using the mixed gas of Si2F6 gas and N2 gas when the semiconductor device including an Si3N4 film as a constituent material is prepared, and bonding the F atoms, the N atoms and the Si atoms. CONSTITUTION:Heaters 102 is provided at the bottom surface of a reacting chamber 101. Exhausting pipes 105 are provided at the peripheral part of the bottom surface of the chamber 101. Si substrates 108, on which Si3N4 films are deposited, are mounted on a susceptor 103. The susceptor 103 is arranged in the chamber 101. An electrode 104, which is connected to an RF power source 107, is provided so as to face the susceptor. Gases from an Si2F4 gas bomb 109 an dfrom an N2 gas bomb 110 are sent to a source-gas introducing pipe 106, where the gases are mixed at a specified ratio. The reacting chamber 101 is filled with the mixed gas. Plasma is yielded between the substrates 108 and the electrode 104. The Si3N4 films are formed on the substrates 108. Thus the electric characteristics are stabilized. This method is suitable for manufacturing super LSIs. |
