| 摘要 |
PURPOSE:To improve the size accuracy by eliminating undercuts when forming a minute pattern by etching of W or an Si compound by etching it in a plasma of the gas of sulfur hexafluoride mixed with hydrocarbon or fluorochloro substituted product thereof. CONSTITUTION:A discharge tube 2 is attached to a vacuum container 1 composing a magnetic field microwave etching device and a sample 8 arranged on a sample table 7 is put in said tube. Next, the microwave generated by a magnet 4 is projected to the discharge tube 2 through a waveguide 5 and at the same time, the synergistic effect of the microwave and the magnetic field produced by actuating the electromagnetic coils 6 surrounding the discharge tube 2 produces a plasma of high ionization rate and radical generation rate and consequently the sample 8 is subjected to etching. At this time, the pressure between a gas inlet system 3 and an outlet system 15 is kept constant and the gas of sulfur hexafluoride mixed with hydrocarbon or the fulorochloro substituted product of that is used as a flowing gas, thereby obtaining a minute pattern of W, etc. without undercuts. |
