| 摘要 |
PURPOSE:To completely set source and drain currents to zero by providing means for implanting carrier to a floating gate to enlarge a depletion layer to enhance a gate voltage by implanting the carrier, thereby enlarging the depletion layer. CONSTITUTION:In a P-channel type depletion Tr, a junction 21 of a P<+> type source region 13 and an N<+> type injector 20 is applied with a reverse voltage to produce a junction breakdown, and hot carriers generated thereby are implanted to a floating gage 18. Since a hole having a positive potential is implanted to the gate 18, a gate voltage shifts to a positive direction. As a result, the gate voltage is raised without providing a booster of the gate voltage to enable complete depletion of a substrate, thereby performing a depletion Tr capable of completely breaking a current by setting a substrate current to zero.
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