| 摘要 |
PURPOSE:To make low noise property and no-aberration state compatible, in the vicinity of the end surface of a gain waveguide type laser, by introducing impurities until the impurities penetrate through an active layer at both sides of a stripe. CONSTITUTION:On an N-GaAs substrate 1, an N-GaAlAs clad layer 3, an active layer 3 incorporating a quantum well structure, a P-GaAlAs clad layer 4 and an N-GaAs current blocking layer 5 are sequentially grown. Then, Zn is diffused only in the vicinity of the end surface. At this time, the depth of diffusion is set so that Zn penetrates through the layer 3. Ga and Al are mixed in the layer 3, and a disorganized region 9 is formed. A groove 10 is formed by removing a part of the layer 5. Thereafter, a P-GaAlAs embedded layer 6 and an N-GaAs cap layer 7 are formed. Then, Zn is diffused so as to reach the layer 6 in the region other than the vicinity of the end surface, and a Zn diffused region 11 is formed. In this constitution, since refractive index type wave-guiding is provided in the vicinity of the end surface, low noises and no-aberration state can be made compatible.
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