| 摘要 |
PURPOSE:To make it possible to perform highly reliable wire bonding by low- energy ultrasonic waves at low temperature, by providing a three-layer structure of a Cu layer, an Ni layer and an Au layer for an electrode on a group III-V compound semiconductor film. CONSTITUTION:A group III-V compound semiconductor film 14 constituting a magnetism sensitive part 19 is formed on an insulating substrate 11. An electrode 15 for wire bonding is formed at the required part on the film 14. Said electrode 15 comprises the following three layers: a Cu layer 16, which is ohmic- contacted with the film 14; an Ni layer 17 on the layer 16; and an Au layer 18 on the layer 17. In a magnetoelectric device having such a wire bonding electrode, the electrode 15 is connected o a lead frame 22 with a thin metal wire 21 by wire bonding. By providing the three-layer structure of the layers 16-18 for the electrode 15 as described above, the highly reliable wire bonded junction can be formed by applying low-power ultrasonic waves at low temperature.
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