| 摘要 |
PURPOSE:To improve yield ratio and reliability by providing a process where the circumference of a bound semiconductor substrate is grinded and unbound section is removed so as to retain only the section that is firmly bound without producing defects in the subsequent process for the adjustment of thickness. CONSTITUTION:Two sheets of wafer 1 and 2 whose one side is specular-finished are bound at both specular faces with pressure and heat applied. At this time, an unbound section 3 is produced at the circumference of the bound surfaces due to the burr of each substrates. Such bound wafer 10 is mounted on a cylinder grinding machine, and its end face is applied to the end face of a rotary grinding stone 11. The grinding stone 11 is provided with inclination faces 11b and 11c that incline upward in the direction of the circumference with an angle on the both sides of the plane cylinder face 11a. The width of the plane section 11b is slightly made shorter than the thickness of the bound wafer, and the circumferences of the both bound wafers contact with the inclined sections 11b and 11c respectively, forming a chamfered section 7 with reduced diameter. |
