| 摘要 |
PURPOSE:To obtain a semiconductor device having a preferable active layer with less remaining strain without microcrack by using as an interlayer insulating film a layer which contains an AlN layer. CONSTITUTION:A silicon nitride layer is accumulated, as a barrier layer for preventing aluminum atoms in an AlN layer 3 from diffusing to a lower layer silicon substrate, on a silicon substrate 1, and the layer 3 is formed with nitrogen gas and high purity aluminum target. A silicon nitride layer 4 is accumulated by the same method as the layer 2 as a barrier layer for preventing aluminum atoms in the AlN layer from diffusing, and a silicon oxide layer 5 is accumulated similarly to the layers 2, 4 for the purpose of improving the matching property with the upper silicon layer. Then, a polycrystalline silicon film is accumulated with monosilane as a starting material gas. This polycrystalline silicon film is oriented in (100) in the perpendicular direction to the substrate in the accumulated state. This silicon film is annealed to obtain a silicon active layer 6.
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