| 摘要 |
PURPOSE:To obtain a high-performance metal base transistor having large current gain by growing a collector, a base and an emitter with a semiconductor crystal layer, and replacing part of the base layer with a metal film. CONSTITUTION:An n-type GaAs layer 11, an A GaAs layer 12 of 500 Angstrom or less thick and an n-GaAs layer 13 of approx. 1,000 Angstrom thick are epitaxially grown, and ohmic electrodes 14, 14' are then formed on the layers 11, 13, respectively. A part of the layer 13 is removed by etching, a silicon dioxide film 15 is then adhered on the entire surface, further etched, and allowed to remain on the side of the layer 13. Then, only the layer 12 is selectively etched, the exposed part of the layer 12 and the part of the perforated layer 12 interposed between the layers 11 and 13 is removed, the side hole is filled by coating with an aluminum film 16, and the excess aluminum film coated on the exposed surface is removed by etching. Then, oxygen ions are implanted to the remaining layer 12 as an insulator 17 together with the part of the layer 13 directly thereabove, and inactivated.
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