| 摘要 |
PURPOSE:To obtain a logic circuit device with high noise margin for both input/ output by adopting different kinds of metals for anode metals constituting an input SBD and a clamp SBD for an output SBDT so as to lower the forward voltage of the former and to increase the forward voltage of the latter. CONSTITUTION:An input Schottky barrier diode (SBD) 3 is constituted by a metal decreasing its forward voltage VF8, e.g., aluminum to input threshold value thereby improving the input noise margin. On the other hand, an 'L' value of an output voltage V11 is a collector-emitter voltage VOE7 of an output Schottky barrier diode transistor (SBDT) 7 and a difference between the base- emitter voltage V E7 and the forward voltage VF(B-O)7 of th clamp SBD inserted between the base and collector. Thus, the forward voltage VF(B-O)7 of the clamp SBD is formed to a comparatively large value close to the VBE7 by using a metal, e.g., platinum so as to lower the 'L' value of the output voltage V11 and to improve the output noise margin.
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