| 摘要 |
PURPOSE:To obtain the title film whose axis easy for magnetization is in the film plane direction by specifying the orientation of a substrate when an iron garnet film contg. ions of Co, Y and a rare earth element is formed on the nonmagnetic garnet single crystal substrate with a liq.-phase epitaxial method. CONSTITUTION:An iron garnet film contg. ions of Co, Y and a rare earth element is formed on a nonmagnetic garnet single crystal substrate by a liq.-phase epitaxial method from a lead oxide-boron oxide flux. In this method, the orientation of the substrate is regulated to {100}. For example, a (YNd)3(CoGeFe)5O12 garnet film is grown in a specified temp. range on a gadolinium-gallium-garnet Gd3Ga5O12(GGG) single crystal substrate having {100} substrate plane direction. Consequently, a magnetic garnet film having its axis easy for magnetization in the film plane direction necessary to realize a waveguide type isolator usable in the 1.5num band can be obtained.
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