| 摘要 |
PURPOSE:To improve the characteristics of a transistor by forming a silicon layer and source and drain electrodes doped by self-aligning by a light CVD method with a gate electrode as a mask in the same vacuum, thereby reducing the influence of a contamination with impurities. CONSTITUTION:A glass substrate 11 in which a gate electrode (Cr) 12 is patterned is disposed at the shown position, a gate insulating film 13 is accumulated, SiH4 gas is then fed, and an a-Si active layer 14 is accumulated. Then, Si2H6 and PH3 are fed in the same vacuum into a chamber 21, an ArF eximer laser 25 is emitted from a quartz substrate side 11, and an n<+> type Si layer 14a is formed by a light CVD method on the a-Si which is masked by the electrode 12 and removed at the top. An electrode metal material formed on the doped layer 14a are readily contacted. After being once evacuated, organic metal material gas such as TMA is fed and the laser 25 is emitted from the quartz substrate side. Then, it is decomposed by the light and aluminum is accumulated on the inadiated part. Accordingly, self-aligned source and drain electrodes (aluminum) 15 are formed. |
