| 摘要 |
PURPOSE:To enable to highly integrate by converting the same polysilicon resistance layer as a conventional gate electrode wiring layer to the second polysilicon resistance layer different from the gate electrode wiring layer. CONSTITUTION:One end of an N-type diffused resistance layer 12 formed on a P-type well 11 and one end of a polysilicon resistance layer 13 containing the second N-type impurity layer different from a gate electrode layer are ohmically connected by a contact 14. The ohmically connected layer 13 is formed at the position of 6,000Angstrom above the layer 12, obtains the prescribed resistance value, and is then connected through a bonding pad aluminum 15 and a contact 16. The other end of the layer 12 is connected with an input gate electrode G after the prescribed resistance value is obtained. A P-type well 11 is ohmically connected by a P-type diffused layer 17 formed in the well 11 through a contact 19 with a Vss power source line 18. |
