| 发明名称 |
Method for fabricating a semiconductor circuit |
| 摘要 |
In order to improve the breakdown voltage characteristics of an MOS circuit, there is carried out, prior to generating a gate oxide, a temperature step at from 900 to 1250 DEG C in a hydrogen/halogen mixture with an inert carrier gas. <IMAGE>
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| 申请公布号 |
DE3516611(A1) |
申请公布日期 |
1986.11.13 |
| 申请号 |
DE19853516611 |
申请日期 |
1985.05.08 |
| 申请人 |
SIEMENS AG |
发明人 |
SCHLOSSER,RUDOLF;MOHR,WERNER,DIPL.-PHYS.DR. |
| 分类号 |
H01L21/28;H01L21/316;(IPC1-7):H01L21/82;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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